
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Infineon TechnologiesManufacturer Product Number
IPN80R1K4P7ATMA1
Description
MOSFET N-CH 800V 4A SOT223
Datasheet
IPN80R1K4P7ATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolMOS™ P7 | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 1.4Ohm @ 1.4A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3.5V @ 70µA | |
| Maximum Gate Charge (Qg) @ Vgs | 10 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 250 pF @ 500 V | |
| Maximum Power Dissipation | 7W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223 | |
| Package / Case | TO-261-4, TO-261AA |
$0.56
In-Stock: 2980
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