IPN60R3K4CEATMA1

Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.

Manufacturer Product Number

IPN60R3K4CEATMA1

Description

MOSFET N-CH 600V 2.6A SOT223

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesCoolMOS™ CE
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage3.4Ohm @ 500mA, 10V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 40µA
Maximum Gate Charge (Qg) @ Vgs4.6 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds93 pF @ 100 V
Maximum Power Dissipation5W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-3
Package / CaseTO-261-4, TO-261AA
$0.14

In-Stock: Scheduled Orders

Check for Additional incoming Stock

Quantity