IPN50R650CEATMA1

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Manufacturer Product Number

IPN50R650CEATMA1

Description

MOSFET N-CH 500V 9A SOT223

Product Attributes

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Model SeriesCoolMOS™ CE
PackageTape & Reel (TR)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)13V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage650mOhm @ 1.8A, 13V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 150µA
Maximum Gate Charge (Qg) @ Vgs15 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds342 pF @ 100 V
Maximum Power Dissipation5W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-3
Package / CaseTO-261-4, TO-261AA
$4.20

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