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Manufacturer
Infineon TechnologiesManufacturer Product Number
IDM10G120C5XTMA1
Description
DIODE SIL CARB 1.2KV 38A TO252-2
Datasheet
IDM10G120C5XTMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolSiC™+ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Maximum DC Reverse Voltage | 1200 V | |
| Average Rectified Current (Io) | 38A | |
| Maximum Forward Voltage at Forward Current | 1.8 V @ 10 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 62 µA @ 12 V | |
| Capacitance at Vr, F | 29pF @ 800V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | PG-TO252-2 | |
| Junction Operating Temperature | -55°C ~ 150°C |
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