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Manufacturer
Infineon TechnologiesManufacturer Product Number
IDH16G65C6XKSA1
Description
DIODE SIL CARB 650V 34A TO220-2
Datasheet
IDH16G65C6XKSA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tube | |
| Part Status | Active | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Maximum DC Reverse Voltage | 650 V | |
| Average Rectified Current (Io) | 34A | |
| Maximum Forward Voltage at Forward Current | 1.35 V @ 16 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 53 µA @ 420 V | |
| Capacitance at Vr, F | 783pF @ 1V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | PG-TO220-2 | |
| Junction Operating Temperature | -55°C ~ 175°C |
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