IDH10G65C6XKSA1

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Manufacturer Product Number

IDH10G65C6XKSA1

Description

DIODE SIL CARB 650V 24A TO220-2

Product Attributes

TYPEDescriptionSELECT ALL
PackageTube
Part StatusActive
TechnologySiC (Silicon Carbide) Schottky
Maximum DC Reverse Voltage650 V
Average Rectified Current (Io)24A
Maximum Forward Voltage at Forward Current1.35 V @ 10 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr33 µA @ 420 V
Capacitance at Vr, F495pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackagePG-TO220-2
Junction Operating Temperature-55°C ~ 175°C
$2.10

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