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Manufacturer
Infineon TechnologiesManufacturer Product Number
FF6MR12W2M1B11BOMA1
Description
SIC 2N-CH 1200V AG-EASY2BM-2
Datasheet
FF6MR12W2M1B11BOMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolSiC™+ | |
| Package | Tray | |
| Part Status | Obsolete | |
| Technology | Silicon Carbide (SiC) | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 5.63mOhm @ 200A, 15V | |
| Maximum Gate Threshold Voltage at Drain Current | 5.55V @ 80mA | |
| Maximum Gate Charge (Qg) @ Vgs | 496nC @ 15V | |
| Maximum Input Capacitance (Ciss) at Vds | 14700pF @ 800V | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | AG-EASY2BM-2 |
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