FF6MR12W2M1B11BOMA1

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Manufacturer Product Number

FF6MR12W2M1B11BOMA1

Description

SIC 2N-CH 1200V AG-EASY2BM-2

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesCoolSiC™+
PackageTray
Part StatusObsolete
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C200A (Tj)
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage5.63mOhm @ 200A, 15V
Maximum Gate Threshold Voltage at Drain Current5.55V @ 80mA
Maximum Gate Charge (Qg) @ Vgs496nC @ 15V
Maximum Input Capacitance (Ciss) at Vds14700pF @ 800V
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY2BM-2
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