
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Infineon TechnologiesManufacturer Product Number
FF23MR12W1M1B11BOMA1
Description
MOSFET 2 N-CH 1200V 50A MODULE
Datasheet
FF23MR12W1M1B11BOMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolSiC™+ | |
| Package | Tray | |
| Part Status | Obsolete | |
| Technology | Silicon Carbide (SiC) | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 50A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 23mOhm @ 50A, 15V | |
| Maximum Gate Threshold Voltage at Drain Current | 5.55V @ 20mA | |
| Maximum Gate Charge (Qg) @ Vgs | 125nC @ 15V | |
| Maximum Input Capacitance (Ciss) at Vds | 3950pF @ 800V | |
| Maximum Power | 20mW | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
$104.23
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