HAT2203C-EL-E

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Manufacturer

Renesas

Manufacturer Product Number

HAT2203C-EL-E

Description

HAT2203C-EL-E - SILICON N CHANNE

Datasheet

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Product Attributes

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PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)2.5V, 4.5V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage90mOhm @ 1A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1.4V @ 1mA
Maximum Gate Charge (Qg) @ Vgs1.8 nC @ 4.5 V
Maximum Gate-Source Voltage±12V
Maximum Input Capacitance (Ciss) at Vds165 pF @ 10 V
Maximum Power Dissipation830mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package6-CMFPAK
Package / Case6-SMD, Flat Leads
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