2SK1958-T1-A

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Manufacturer

Renesas

Manufacturer Product Number

2SK1958-T1-A

Description

2SK1958-T1-A - N-CHANNEL MOS FET

Datasheet

noDatasheet

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16 V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)1.5V, 4V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage12Ohm @ 10mA, 4V
Maximum Gate Threshold Voltage at Drain Current1.1V @ 10µA
Maximum Gate-Source Voltage±7V
Maximum Input Capacitance (Ciss) at Vds10 pF @ 3 V
Maximum Power Dissipation150mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-MMPAK
Package / Case8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
$0.14

In-Stock: 24502

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