NTLJF3117PT1G

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Manufacturer

onsemi

Manufacturer Product Number

NTLJF3117PT1G

Description

MOSFET P-CH 20V 2.3A 6WDFN

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesµCool™
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)1.8V, 4.5V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage100mOhm @ 2A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs6.2 nC @ 4.5 V
Maximum Gate-Source Voltage±8V
Maximum Input Capacitance (Ciss) at Vds531 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Maximum Power Dissipation710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad
$0.15

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