NTLJD3115PT1G

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Manufacturer

onsemi

Manufacturer Product Number

NTLJD3115PT1G

Description

MOSFET 2P-CH 20V 2.3A 6-WDFN

Product Attributes

TYPEDescriptionSELECT ALL
PackageTape & Reel (TR)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.3A
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage100mOhm @ 2A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs6.2nC @ 4.5V
Maximum Input Capacitance (Ciss) at Vds531pF @ 10V
Maximum Power710mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)
$0.28

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