NDD02N60Z-1G

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Manufacturer

onsemi

Manufacturer Product Number

NDD02N60Z-1G

Description

MOSFET N-CH 600V 2.2A IPAK

Product Attributes

TYPEDescriptionSELECT ALL
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage4.8Ohm @ 1A, 10V
Maximum Gate Threshold Voltage at Drain Current4.5V @ 50µA
Maximum Gate Charge (Qg) @ Vgs10.1 nC @ 10 V
Maximum Gate-Source Voltage±30V
Maximum Input Capacitance (Ciss) at Vds274 pF @ 25 V
Maximum Power Dissipation57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
$0.13

In-Stock: 48480

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