NDC632P

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Manufacturer

onsemi

Manufacturer Product Number

NDC632P

Description

MOSFET P-CH 20V 2.7A SUPERSOT6

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)2.7V, 4.5V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage140mOhm @ 2.7A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs15 nC @ 4.5 V
Maximum Gate-Source Voltage-8V
Maximum Input Capacitance (Ciss) at Vds550 pF @ 10 V
Maximum Power Dissipation1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6
$0.28

In-Stock: 370466

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