IRF710B

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Manufacturer

onsemi

Manufacturer Product Number

IRF710B

Description

N-CHANNEL POWER MOSFET

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage3.4Ohm @ 1A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs10 nC @ 10 V
Maximum Gate-Source Voltage±30V
Maximum Input Capacitance (Ciss) at Vds330 pF @ 25 V
Maximum Power Dissipation36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Active

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