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Manufacturer
onsemiManufacturer Product Number
FDFS2P753Z
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Datasheet
FDFS2P753Z Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | PowerTrench® | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 115mOhm @ 3A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 9.3 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±25V | |
| Maximum Input Capacitance (Ciss) at Vds | 455 pF @ 10 V | |
| FET Feature | Schottky Diode (Isolated) | |
| Maximum Power Dissipation | 1.6W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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