FDD8882

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Manufacturer Product Number

FDD8882

Description

POWER FIELD-EFFECT TRANSISTOR, 3

Product Attributes

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Model SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C12.6A (Ta), 55A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage11.5mOhm @ 35A, 10V
Maximum Gate Threshold Voltage at Drain Current2.5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs33 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1260 pF @ 15 V
Maximum Power Dissipation55W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Active

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