Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
onsemiManufacturer Product Number
FDD5N60NZTM
Description
MOSFET N-CH 600V 4A DPAK
Datasheet
FDD5N60NZTM Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | UniFET-II™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 2Ohm @ 2A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 5V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 13 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±25V | |
| Maximum Input Capacitance (Ciss) at Vds | 600 pF @ 25 V | |
| Maximum Power Dissipation | 83W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252AA | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
$0.29
In-Stock: 165012
Check for Additional incoming Stock
Quantity
Related Products
Popular Parts Number
| Mfr Part # | Price (tag) | Quantity Available |
|---|---|---|
 FDD5612POWER FIELD-EFFECT TRANSISTOR, 1 | 0.70 | 300101 Marketplace |
 FDD5680POWER FIELD-EFFECT TRANSISTOR, 3 | 0.12 | 334858 Marketplace |
 FDD5680MOSFET N-CH 60V 8.5A TO252 | 0.05 | Scheduled Orders Marketplace |
 FDD5614PMOSFET P-CH 60V 15A TO252 | 0.32 | 478791 Marketplace |
 FDD5612MOSFET N-CH 60V 5.4A TO252-3 | 0.28 | Scheduled Orders Marketplace |
