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Manufacturer
onsemiManufacturer Product Number
FDD5612
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Datasheet
FDD5612 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | PowerTrench® | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 6V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 55mOhm @ 5.4A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 11 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 660 pF @ 30 V | |
| Maximum Power Dissipation | 3.8W (Ta), 42W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252, (D-Pak) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
$0.70
In-Stock: 300101
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Quantity
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