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Manufacturer
Microsemi CorporationManufacturer Product Number
JAN2N6766
Description
MOSFET N-CH 200V 30A TO3
Datasheet
JAN2N6766 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 90mOhm @ 30A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 115 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Power Dissipation | 4W (Ta), 150W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3 | |
| Package / Case | TO-204AE |
$2.80
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Quantity
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