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Manufacturer
Microsemi CorporationManufacturer Product Number
APT45GR65B2DU30
Description
INSULATED GATE BIPOLAR TRANSISTO
Datasheet
APT45GR65B2DU30 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| IGBT Type | NPT | |
| Maximum Collector-Emitter Breakdown Voltage | 650 V | |
| Collector Current (Ic) (Max) | 118 A | |
| Current - Collector Pulsed (Icm) | 224 A | |
| Maximum Collector-Emitter On-State Voltage at Gate-Emitter Voltage and Collector Current | 2.4V @ 15V, 45A | |
| Maximum Power | 543 W | |
| Input Type | Standard | |
| Gate Charge | 203 nC | |
| Delay Time On/Off at 25°C | 15ns/100ns | |
| Test Condition | 433V, 45A, 4.3Ohm, 15V | |
| Reverse Recovery Time (trr) | 80 ns | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | T-MAX™ [B2] |
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