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Manufacturer
Microsemi CorporationManufacturer Product Number
APT65GP60B2G
Description
IGBT 600V 100A 833W TMAX
Datasheet
APT65GP60B2G Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | POWER MOS 7® | |
| Package | Tube | |
| Part Status | Active | |
| IGBT Type | PT | |
| Maximum Collector-Emitter Breakdown Voltage | 600 V | |
| Collector Current (Ic) (Max) | 100 A | |
| Current - Collector Pulsed (Icm) | 250 A | |
| Maximum Collector-Emitter On-State Voltage at Gate-Emitter Voltage and Collector Current | 2.7V @ 15V, 65A | |
| Maximum Power | 833 W | |
| Switching Energy | 605µJ (on), 896µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 210 nC | |
| Delay Time On/Off at 25°C | 30ns/91ns | |
| Test Condition | 400V, 65A, 5Ohm, 15V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant |
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