MSC025SMA120SCT/R

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Manufacturer Product Number

MSC025SMA120SCT/R

Description

MOSFET SIC 1200 V 25 MOHM PSMT

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Product Attributes

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Model SeriesmSiC™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C108A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)18V, 20V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage31mOhm @ 40A, 20V
Maximum Gate Threshold Voltage at Drain Current3V @ 3mA
Maximum Gate Charge (Qg) @ Vgs232 nC @ 20 V
Maximum Gate-Source Voltage+23V, -10V
Maximum Input Capacitance (Ciss) at Vds3633 pF @ 1000 V
Maximum Power Dissipation524W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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