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Manufacturer
Microchip TechnologyManufacturer Product Number
VN2110K1-G
Description
MOSFET N-CH 100V 200MA SOT23-3
Datasheet
VN2110K1-G Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tj) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 4Ohm @ 500mA, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.4V @ 1mA | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 50 pF @ 25 V | |
| Maximum Power Dissipation | 360mW (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
$0.03
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