MSC025SMA120B4N

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Manufacturer Product Number

MSC025SMA120B4N

Description

MOSFET SIC 1200 V 25 MOHM TO-247

Product Attributes

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PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C113A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)18V, 20V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage31mOhm @ 40A, 20V
Maximum Gate Threshold Voltage at Drain Current5V @ 3mA
Maximum Gate Charge (Qg) @ Vgs232 nC @ 20 V
Maximum Gate-Source Voltage+23V, -10V
Maximum Input Capacitance (Ciss) at Vds3633 pF @ 1000 V
Maximum Power Dissipation577W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
Active

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