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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRFS3006PBF
Description
MOSFET N-CH 60V 195A D2PAK
Datasheet
IRFS3006PBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tube | |
| Part Status | Discontinued at | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 2.5mOhm @ 170A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 300 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 8970 pF @ 50 V | |
| Maximum Power Dissipation | 375W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
$0.84
In-Stock: 15976
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Quantity
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