IRF7341TRPBFXTMA1

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Manufacturer Product Number

IRF7341TRPBFXTMA1

Description

MOSFET 2N-CH 55V 4.7A 8DSO-902

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Product Attributes

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Model SeriesHEXFET®
PackageTape & Reel (TR)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 N-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage50mOhm @ 4.7A, 10V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs36nC @ 10V
Maximum Input Capacitance (Ciss) at Vds740pF @ 25V
Maximum Power2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8-902
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