
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF7341GTRPBF
Description
MOSFET N-CH 55V 5.1A
Datasheet
IRF7341GTRPBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 5.1A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 50mOhm @ 5.1A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 1V @ 250µA (Min) | |
| Maximum Gate Charge (Qg) @ Vgs | 44nC @ 10V | |
| Maximum Input Capacitance (Ciss) at Vds | 780pF @ 25V | |
| Maximum Power | 2.4W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
$0.70
In-Stock: 14000
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