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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF7309PBF
Description
P-CHANNEL POWER MOSFET
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tube | |
| Part Status | Obsolete | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | N and P-Channel | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 3A (Ta) | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 1V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 25nC @ 4.5V | |
| Maximum Input Capacitance (Ciss) at Vds | 520pF, 440pF @ 15V | |
| Maximum Power | 1.4W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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