IRF6607TR1

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Manufacturer Product Number

IRF6607TR1

Description

MOSFET N-CH 30V 27A DIRECTFET

Product Attributes

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Model SeriesHEXFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C27A (Ta), 94A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 7V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage3.3mOhm @ 25A, 10V
Maximum Gate Threshold Voltage at Drain Current2V @ 250µA
Maximum Gate Charge (Qg) @ Vgs75 nC @ 4.5 V
Maximum Gate-Source Voltage±12V
Maximum Input Capacitance (Ciss) at Vds6930 pF @ 15 V
Maximum Power Dissipation3.6W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MT
Package / CaseDirectFET™ Isometric MT
$1.68

In-Stock: 2000

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