IRF5305LPBF

Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.

Manufacturer Product Number

IRF5305LPBF

Description

MOSFET P-CH 55V 31A TO262

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage60mOhm @ 16A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs63 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1200 pF @ 25 V
Maximum Power Dissipation3.8W (Ta), 110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
$0.56

In-Stock: 850

Check for Additional incoming Stock

Quantity