IRF5210LPBF

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Manufacturer Product Number

IRF5210LPBF

Description

MOSFET P-CH 100V 38A TO262

Product Attributes

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Model SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage60mOhm @ 38A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs230 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds2780 pF @ 25 V
Maximum Power Dissipation3.1W (Ta), 170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
$2.52

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