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Manufacturer
Infineon TechnologiesManufacturer Product Number
IQE006NE2LM5ATMA1
Description
MOSFET N-CH 25V 41A/298A 8TSON
Datasheet
IQE006NE2LM5ATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™5 | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 25 V | |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 298A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 650mOhm @ 20A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 82.1 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±16V | |
| Maximum Input Capacitance (Ciss) at Vds | 5453 pF @ 12 V | |
| Maximum Power Dissipation | 2.1W (Ta), 89W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSON-8-4 | |
| Package / Case | 8-PowerTDFN |
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