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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPZ40N04S58R4ATMA1
Description
MOSFET N-CH 40V 40A 8TSDSON-32
Datasheet
IPZ40N04S58R4ATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | Automotive, AEC-Q101, OptiMOS™-5 | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 7V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 8.4mOhm @ 20A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3.4V @ 10µA | |
| Maximum Gate Charge (Qg) @ Vgs | 13.7 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 771 pF @ 25 V | |
| Maximum Power Dissipation | 34W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-8-32 | |
| Package / Case | 8-PowerTDFN |
$1.68
In-Stock: 6496
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