
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Infineon TechnologiesManufacturer Product Number
IPW65R310CFD
Description
N-CHANNEL POWER MOSFET
Datasheet
IPW65R310CFD Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolMOS CFD2™ | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 310mOhm @ 4.4A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4.5V @ 440µA | |
| Maximum Gate Charge (Qg) @ Vgs | 41 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 1100 pF @ 100 V | |
| Maximum Power Dissipation | 104.2W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO247 | |
| Package / Case | TO-247-3 |
Active
In-Stock: Scheduled Orders
Check for Additional incoming Stock
Quantity
Related Products
Popular Parts Number









