IPW65R310CFD

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Manufacturer Product Number

IPW65R310CFD

Description

N-CHANNEL POWER MOSFET

Product Attributes

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Model SeriesCoolMOS CFD2™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11.4A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage310mOhm @ 4.4A, 10V
Maximum Gate Threshold Voltage at Drain Current4.5V @ 440µA
Maximum Gate Charge (Qg) @ Vgs41 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1100 pF @ 100 V
Maximum Power Dissipation104.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247
Package / CaseTO-247-3
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