IPW65R045C7FKSA1

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Manufacturer Product Number

IPW65R045C7FKSA1

Description

MOSFET N-CH 650V 46A TO247-3

Product Attributes

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Model SeriesCoolMOS™ C7
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage45mOhm @ 24.9A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 1.25mA
Maximum Gate Charge (Qg) @ Vgs93 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds4340 pF @ 400 V
Maximum Power Dissipation227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-1
Package / CaseTO-247-3
$0.56

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