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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPW60R099P7XKSA1
Description
MOSFET N-CH 600V 31A TO247-3
Datasheet
IPW60R099P7XKSA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolMOS™ P7 | |
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 99mOhm @ 10.5A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4V @ 530µA | |
| Maximum Gate Charge (Qg) @ Vgs | 45 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 1952 pF @ 400 V | |
| Maximum Power Dissipation | 117W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO247-3 | |
| Package / Case | TO-247-3 |
$2.84
In-Stock: 4597
Check for Additional incoming Stock
Quantity
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