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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPP80P03P4L04AKSA1
Description
MOSFET P-CH 30V 80A TO220-3
Datasheet
IPP80P03P4L04AKSA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ | |
| Package | Tube | |
| Part Status | Not For New Designs | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 4.4mOhm @ 80A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2V @ 253µA | |
| Maximum Gate Charge (Qg) @ Vgs | 160 nC @ 10 V | |
| Maximum Gate-Source Voltage | +5V, -16V | |
| Maximum Input Capacitance (Ciss) at Vds | 11300 pF @ 25 V | |
| Maximum Power Dissipation | 137W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3-1 | |
| Package / Case | TO-220-3 |
$1.12
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