IPP60R600P7XKSA1

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Manufacturer Product Number

IPP60R600P7XKSA1

Description

MOSFET N-CH 650V 6A TO220-3

Product Attributes

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Model SeriesCoolMOS™ P7
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage600mOhm @ 1.7A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 80µA
Maximum Gate Charge (Qg) @ Vgs9 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds363 pF @ 400 V
Maximum Power Dissipation30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
$5.04

In-Stock: 3050

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