IPN50R3K0CEATMA1

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Manufacturer Product Number

IPN50R3K0CEATMA1

Description

MOSFET N-CH 500V 2.6A SOT223

Product Attributes

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Model SeriesCoolMOS™ CE
PackageTape & Reel (TR)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)13V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage3Ohm @ 400mA, 13V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 30µA
Maximum Gate Charge (Qg) @ Vgs4.3 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds84 pF @ 100 V
Maximum Power Dissipation5W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-3
Package / CaseTO-261-4, TO-261AA
$0.42

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