IPD80R1K4P7ATMA1

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Manufacturer Product Number

IPD80R1K4P7ATMA1

Description

MOSFET N-CH 800V 4A TO252

Product Attributes

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Model SeriesCoolMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage1.4Ohm @ 1.4A, 10V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 700µA
Maximum Gate Charge (Qg) @ Vgs10 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds250 pF @ 500 V
Maximum Power Dissipation32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-2
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
$0.42

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