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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPD60R380P6ATMA1
Description
MOSFET N-CH 600V 10.6A TO252-3
Datasheet
IPD60R380P6ATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolMOS™ P6 | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 380mOhm @ 3.8A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4.5V @ 320µA | |
| Maximum Gate Charge (Qg) @ Vgs | 19 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 877 pF @ 100 V | |
| Maximum Power Dissipation | 83W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
$4.20
In-Stock: 15000
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Quantity
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