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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPD60N10S4L12ATMA1
Description
MOSFET N-CH 100V 60A TO252-3
Datasheet
IPD60N10S4L12ATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | Automotive, AEC-Q101, HEXFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 12mOhm @ 60A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.1V @ 46µA | |
| Maximum Gate Charge (Qg) @ Vgs | 49 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±16V | |
| Maximum Input Capacitance (Ciss) at Vds | 3170 pF @ 25 V | |
| Maximum Power Dissipation | 94W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-313 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
$0.84
In-Stock: 6917
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Quantity
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