IPD30N06S2L23ATMA3

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Manufacturer Product Number

IPD30N06S2L23ATMA3

Description

MOSFET N-CH 55V 30A TO252-31

Product Attributes

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Model SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage23mOhm @ 22A, 10V
Maximum Gate Threshold Voltage at Drain Current2V @ 50µA
Maximum Gate Charge (Qg) @ Vgs42 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1091 pF @ 25 V
Maximum Power Dissipation100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
$0.56

In-Stock: 12837

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