
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Infineon TechnologiesManufacturer Product Number
IPD30N06S2L23ATMA3
Description
MOSFET N-CH 55V 30A TO252-31
Datasheet
IPD30N06S2L23ATMA3 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 23mOhm @ 22A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2V @ 50µA | |
| Maximum Gate Charge (Qg) @ Vgs | 42 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 1091 pF @ 25 V | |
| Maximum Power Dissipation | 100W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-11 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
$0.56
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