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Manufacturer
Infineon TechnologiesManufacturer Product Number
IGT60R190D1SATMA1
Description
GANFET N-CH 600V 12.5A 8HSOF
Datasheet
IGT60R190D1SATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolGaN™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) | |
| Maximum Gate Threshold Voltage at Drain Current | 1.6V @ 960µA | |
| Maximum Gate-Source Voltage | -10V | |
| Maximum Input Capacitance (Ciss) at Vds | 157 pF @ 400 V | |
| Maximum Power Dissipation | 55.5W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-HSOF-8-3 | |
| Package / Case | 8-PowerSFN |
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