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Manufacturer
Infineon TechnologiesManufacturer Product Number
BSZ15DC02KDHXTMA1
Description
MOSFET N/P-CH 20V 5.1/3.2A TDSON
Datasheet
BSZ15DC02KDHXTMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | Automotive, AEC-Q101, HEXFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Configuration | N and P-Channel Complementary | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 5.1A, 3.2A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 55mOhm @ 5.1A, 4.5V | |
| Maximum Gate Threshold Voltage at Drain Current | 1.4V @ 110µA | |
| Maximum Gate Charge (Qg) @ Vgs | 2.8nC @ 4.5V | |
| Maximum Input Capacitance (Ciss) at Vds | 419pF @ 10V | |
| Maximum Power | 2.5W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | PG-TSDSON-8-FL |
$0.53
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