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Manufacturer
Infineon TechnologiesManufacturer Product Number
BSZ034N04LSATMA1
Description
MOSFET N-CH 40V 19A/40A TSDSON
Datasheet
BSZ034N04LSATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | Automotive, AEC-Q101, OptiMOS™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 40A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 3.4mOhm @ 20A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 25 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 1800 pF @ 20 V | |
| Maximum Power Dissipation | 2.1W (Ta), 52W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-8-FL | |
| Package / Case | 8-PowerTDFN |
$0.42
In-Stock: 1800
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