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Manufacturer
Infineon TechnologiesManufacturer Product Number
BSC066N06NSATMA1
Description
MOSFET N-CH 60V 64A TDSON-8-6
Datasheet
BSC066N06NSATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 6V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 6.6mOhm @ 50A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3.3V @ 20µA | |
| Maximum Gate Charge (Qg) @ Vgs | 21 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 1500 pF @ 30 V | |
| Maximum Power Dissipation | 2.5W (Ta), 46W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TDSON-8-6 | |
| Package / Case | 8-PowerTDFN |
$0.35
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