2N6661

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Manufacturer

Vishay Siliconix

Manufacturer Product Number

2N6661

Description

MOSFET N-CH 90V 860MA TO39

Product Attributes

TYPEDescriptionSELECT ALL
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)90 V
Current - Continuous Drain (Id) @ 25°C860mA (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage4Ohm @ 1A, 10V
Maximum Gate Threshold Voltage at Drain Current2V @ 1mA
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds50 pF @ 25 V
Maximum Power Dissipation725mW (Ta), 6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AD, TO-39-3 Metal Can
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