
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Texas InstrumentsManufacturer Product Number
CSD25310Q2T
Description
MOSFET P-CH 20V 20A 6WSON
Datasheet
CSD25310Q2T Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | NexFET™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 1.8V, 4.5V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 23.9mOhm @ 5A, 4.5V | |
| Maximum Gate Threshold Voltage at Drain Current | 1.1V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 4.7 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | ±8V | |
| Maximum Input Capacitance (Ciss) at Vds | 655 pF @ 10 V | |
| Maximum Power Dissipation | 2.9W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-WSON (2x2) | |
| Package / Case | 6-WDFN Exposed Pad |
$0.22
In-Stock: 3630
Check for Additional incoming Stock
Quantity
Related Products
Popular Parts Number










